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| MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM300HC-M * * * * IC Collector current ........................ 300A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 100 Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 80 5.5 C 20 E B E B 48 8 BX 12 12 22 16 22 62 E BX 25 E M4 64 M6 8 5.5 21 LABEL 25 27 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 350 350 400 10 300 300 1250 10 3000 -40~+150 -40~+125 Charged part to case, AC for 1 minute B(E) terminal screw M4 -- 0.98~1.47 10~15 0.98~1.47 10~15 1.96~2.94 20~30 1.47~1.96 15~20 420 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm N*m kg*cm g BX terminal screw M4 -- Mounting torque Main terminal screw M6 Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=350V, VEB=2V VCB=400V,Emitter open VEB=10V IC=300A, IB=3.0A -IC=300A (diode forward voltage) IC=300A, VCE=2V Min. -- -- -- -- -- -- 100 -- VCC=200V, IC=300A, IB1=-IB2=6A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 600 2.0 2.5 1.85 -- 2.0 10 3.0 0.1 0.25 0.05 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 500 Tj=25C IB=6.0A 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) VCE=5.0V 400 IB=3.0A 300 IB=1.5A DC CURRENT GAIN hFE VCE=2.0V 200 IB=0.6A 100 IB=0.3A Tj=25C Tj=125C 5 7 10 1 2 3 4 5 7 10 2 2 3 45 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.4 1.6 1.8 2.0 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE=2.0V Tj=25C 2.2 2.4 10 0 7 5 VCE(sat) 4 3 IB=3.0A 2 Tj=25C Tj=125C 10 -1 4 5 7 10 1 2 3 4 5 7 10 2 2 34 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25C Tj=125C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 ton, ts, tf (s) ts ton tf 3 2 IC=400A 1 IC=100A 0 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 IC=300A IC=200A SWITCHING TIME VCC=200V IB1=-IB2=6.0A 2 3 4 5 7 10 2 Tj=25C Tj=125C 2 3 4 5 7 10 3 10 1 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 2 REVERSE BIAS SAFE OPERATING AREA 800 Tj=125C COLLECTOR CURRENT IC (A) SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 2 ts, tf (s) 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 350 400 IB2=-6A ts tf VCC=200V IC=300A IB1=6A 3 4 5 7 10 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 23 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 TC =25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 90 DERATING FACTOR OF F. B. S. O. A. tw=50s 1m COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 100s 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 200 s 10 m s s COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 0.10 0.08 D C 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Zth (j-c) (C/ W) 0.06 0.04 0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 0.6 1.0 1.4 1.8 2.2 0.2 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 3200 2800 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=200V 5 IB1= -IB2=6A 3 Tj=25C 2 Tj=125C Irr 10 2 7 5 3 Qrr 2 10 2 2400 2000 Irr (A), Qrr (c) 10 1 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 1 10 0 7 5 trr 3 2 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 0.4 0.3 Zth (j-c) (C/ W) 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) |
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